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Completely (001)-textured growth and electrical properties of Bi₄Ti₃O₁₂/LaNiO₃ heterostructures prepared by pulsed laser deposition on LaAlO₃ single crystal substratesZHANG, X. J; ZHANG, S. T; CHEN, Y. F et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 719-725, issn 0167-9317, 7 p.Conference Paper

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Investigation of epitaxial LaNiO_3-x thin films by high-energy XPSMICKEVICIUS, S; GREBINSKIJ, S; BONDARENKA, V et al.Journal of alloys and compounds. 2006, Vol 423, Num 1-2, pp 107-111, issn 0925-8388, 5 p.Conference Paper

Preparation and properties of Pb(Zr, Ti)O₃ ferroelectric thin films and compositionally graded thin films on LaNiO₃/Si substratesLI JIANKANG; YAO XI.Journal of electroceramics. 2008, Vol 21, Num 1-4, pp 641-644, issn 1385-3449, 4 p.Conference Paper

LaNiO₃@SiO₂ core-shell nano-particles for the dry reforming of CH₄ in the dielectric barrier discharge plasmaXIAOGANG ZHENG; SHIYU TAN; LICHUN DONG et al.International journal of hydrogen energy. 2014, Vol 39, Num 22, pp 11360-11367, issn 0360-3199, 8 p.Article

Electrocatalytic activity of high specific surface area Perovskite-type LaNiO₃ via sol-gel route for electrolytic oxygen evolution in alkaline solutionSINGH, R. N; TIWARI, S. K; SINGH, S. P et al.International journal of hydrogen energy. 1997, Vol 22, Num 6, pp 557-562, issn 0360-3199Article

Preparation and conducting performance of LaNiO₃ thin film on Si substrateYONGFA ZHU; HAI WANG; PENG LIU et al.Thin solid films. 2005, Vol 471, Num 1-2, pp 48-52, issn 0040-6090, 5 p.Article

Effect of LaNiO₃ sol concentration on the structure and dielectric properties of Pb(Zr_0.53Ti_0.47)O₃ thin films grown on LaNiO₃-coated Si substratesXIAOYAN YANG; JINRONG CHENG; SHENWEN YU et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3466-3469, issn 0022-0248, 4 p.Article

Low-temperature synthesis of the infinite-layer compound LaNiO₂ using CaH₂ as reductantTAKAMATSU, Tomohisa; KATO, Masatsune; NOJI, Takashi et al.Physica. C. Superconductivity. 2010, Vol 470, Num SUP1, issn 0921-4534, S764-S765Conference Paper

CO₂ reforming of methane over LaNiO₃ as precursor materialBATIOT-DUPEYRAT, Catherine; SIERRA GALLEGO, German Alberto; MONDRAGON, Fanor et al.Catalysis today. 2005, Vol 107-08, pp 474-480, issn 0920-5861, 7 p.Conference Paper

AFM study of LaNiO₃ thin films on various single crystal substrates prepared by using a metal naphthenate precursorHWANG, Kyu-Seog; KANG, Bo-An; JEON, Young-Sun et al.Surface & coatings technology. 2005, Vol 190, Num 2-3, pp 331-335, issn 0257-8972, 5 p.Article

Fabrication and ferroelectric properties of BiFeO₃/LaNiO₃ artificial superlattice structures grown by radio-frequency magnetron-sputteringLIU, Yen-Ting; CHIU, Shang-Jui; LEE, Hsin-Yi et al.Thin solid films. 2013, Vol 529, pp 66-70, issn 0040-6090, 5 p.Conference Paper

Substrate-dependant chemical stability and conductivity of LaNiO_3―x thin filmsHSIAO, Chun-Lung; XIAODING QI.Thin solid films. 2013, Vol 529, pp 356-359, issn 0040-6090, 4 p.Conference Paper

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrodeXIUYUN LEI; RERNIENS, Denis; SAMA, Nossikpendou et al.Journal of crystal growth. 2012, Vol 347, Num 1, pp 15-18, issn 0022-0248, 4 p.Article

Characterizing nanoscale electromechanical fatigue in Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films by piezoresponse force microscopyGATOUX, A; FERRI, A; DETALLE, M et al.Thin solid films. 2011, Vol 520, Num 1, pp 591-594, issn 0040-6090, 4 p.Article

Electronic structure and optical properties of LaNiO₃: First-principles calculationsLI GUAN; BAOTING LIU; LITAO JIN et al.Solid state communications. 2010, Vol 150, Num 41-42, pp 2011-2014, issn 0038-1098, 4 p.Article

Preparation and characterization of BiFeO₃/LaNiO₃ heterostructure films grown on silicon substrateLI, Y. W; SHEN, Y. D; YUE, F. Y et al.Journal of crystal growth. 2010, Vol 312, Num 4, pp 617-620, issn 0022-0248, 4 p.Article

Chemical and physical characterization of LaNiO₃ thin films deposited by sputtering for top and bottom electrodes in ferroelectric structureDETALLE, M; REMIENS, D.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3596-3603, issn 0022-0248, 8 p.Article

Growth and characterization of sputtered LaNiO₃ films obtained with (La₂NiO₄+Ni) cermet targetsKUO, Dong-Hau; WU, Wun-Hao; CHANG, Ching-Long et al.Thin solid films. 2008, Vol 517, Num 2, pp 731-736, issn 0040-6090, 6 p.Article

Improved dielectric properties of (11 O)-preferred (Pb, La) (Zr, Sn, Ti)O₃ antiferroelectric thin films on metalorganic decomposition-derived LaNiO₃ buffer layerXIHONG HAO; JIWEI ZHAI; XI YAO et al.Journal of crystal growth. 2008, Vol 311, Num 1, pp 90-94, issn 0022-0248, 5 p.Article

Tailoring of morphology and orientation of LaNiO₃ films from polymeric precursorsPOCUCA, M; BRANKOVIC, G; BRNNKOVIC, Z et al.Journal of the European Ceramic Society. 2007, Vol 27, Num 13-15, pp 3819-3822, issn 0955-2219, 4 p.Conference Paper

Roughness in manganite-based superlatticesROJAS SANCHEZ, J. C; GRANADA, M; STEREN, L. B et al.Applied surface science. 2007, Vol 254, Num 1, pp 219-221, issn 0169-4332, 3 p.Conference Paper

Growth and properties of (001)-oriented Pb(Zr_0.52Ti_0.48)O₃/LaNiO₃ films on Si(001) substrates with TiN buffer layersZHU, T. J; LU, L; THOMPSON, C. V et al.Journal of crystal growth. 2004, Vol 273, Num 1-2, pp 172-178, issn 0022-0248, 7 p.Article

Preparation of nanosized perovskite LaNiO₃ powder via amorphous heteronuclear complex precursorHAI WANG; YONGFA ZHU; PENG LIU et al.Journal of materials science. 2003, Vol 38, Num 9, pp 1939-1943, issn 0022-2461, 5 p.Article